FJP2160D Datasheet. Specs and Replacement
Type Designator: FJP2160D 📄📄
SMD Transistor Code: J2160D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1600 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO-220
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FJP2160D datasheet
May 2012 FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description High Voltage and High Speed Power Switch The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when Application used in an ESBCTM configuration in applications such as Emitter-Switched Bipolar/MOSFET Cascode power supplies, motor drivers, Smart Grid, o... See More ⇒
April 2013 FJP2145 ESBC Rated NPN Power Transistor ESBC Features (FDC655 MOSFET) Description VCS(ON) IC Equiv. RCS(ON)(1) The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when 0.21 V 2 A 0.105 used in an ESBC configuration in applications such as power supplies, motor drivers, smart grid, or ignition Low Equivalent On Resis... See More ⇒
Detailed specifications: DMS935E2, DTA114WCA, EMF23, EMF24, EMF5, FJP13009H2TU, FJP1943, FJP2145, BC337, FJP5200, FJPF2145, FJX992, FML10, FML9, FMMT413, FMMT42CSM, FMMT42DCSM
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