FJP2160D Datasheet, Equivalent, Cross Reference Search
Type Designator: FJP2160D
SMD Transistor Code: J2160D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1600 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO-220
FJP2160D Transistor Equivalent Substitute - Cross-Reference Search
FJP2160D Datasheet (PDF)
fjp2160d.pdf
May 2012FJP2160DESBCTM Rated NPN Silicon TransistorApplicationsDescription High Voltage and High Speed Power Switch The FJP2160D is a low-cost, high performance powerswitch designed to provide the best performance when Applicationused in an ESBCTM configuration in applications such as: Emitter-Switched Bipolar/MOSFET Cascode power supplies, motor drivers, Smart Grid, o
fjp2145.pdf
April 2013FJP2145ESBC Rated NPN Power TransistorESBC Features (FDC655 MOSFET) DescriptionVCS(ON) IC Equiv. RCS(ON)(1) The FJP2145 is a low-cost, high-performance powerswitch designed to provide the best performance when0.21 V 2 A 0.105 used in an ESBC configuration in applications such as:power supplies, motor drivers, smart grid, or ignition Low Equivalent On Resis
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RT1P141M | FJD5555TM | 2SB227 | 2N956
History: RT1P141M | FJD5555TM | 2SB227 | 2N956
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