All Transistors. FJP2160D Datasheet

 

FJP2160D Datasheet and Replacement


   Type Designator: FJP2160D
   SMD Transistor Code: J2160D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 1600 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO-220
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FJP2160D Datasheet (PDF)

 ..1. Size:703K  fairchild semi
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FJP2160D

May 2012FJP2160DESBCTM Rated NPN Silicon TransistorApplicationsDescription High Voltage and High Speed Power Switch The FJP2160D is a low-cost, high performance powerswitch designed to provide the best performance when Applicationused in an ESBCTM configuration in applications such as: Emitter-Switched Bipolar/MOSFET Cascode power supplies, motor drivers, Smart Grid, o

 9.1. Size:773K  fairchild semi
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FJP2160D

April 2013FJP2145ESBC Rated NPN Power TransistorESBC Features (FDC655 MOSFET) DescriptionVCS(ON) IC Equiv. RCS(ON)(1) The FJP2145 is a low-cost, high-performance powerswitch designed to provide the best performance when0.21 V 2 A 0.105 used in an ESBC configuration in applications such as:power supplies, motor drivers, smart grid, or ignition Low Equivalent On Resis

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