All Transistors. FTD1989 Datasheet

 

FTD1989 Datasheet, Equivalent, Cross Reference Search


   Type Designator: FTD1989
   SMD Transistor Code: DF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: SOT-89

 FTD1989 Transistor Equivalent Substitute - Cross-Reference Search

   

FTD1989 Datasheet (PDF)

 ..1. Size:100K  first silicon
 ftd1989.pdf

FTD1989

SEMICONDUCTORFTD1898TECHNICAL DATAACHGFTD1898 TRANSISTOR (NPN) FEATURES DDK High Breakdown Voltage and Current F FDIM MILLIMETERS Excellent DC Current Gain Linearity A 4.70 MAX_+B 2.50 0.20 Complement the FTB1260 C 1.70 MAX1 2 3D 0.45+0.15/-0.10 Low Collector-Emitter Saturation Voltage E 4.25 MAX_+F 1.50 0.10G 0.40 TYP1. BASEH 1.7 MA

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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