LMSD1819A-RT1G pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

LMSD1819A-RT1G Specs and Replacement

Type Designator: LMSD1819A-RT1G

SMD Transistor Code: ZR

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 210

Noise Figure, dB: -

Package: SOT-323

LMSD1819A-RT1G Substitution

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LMSD1819A-RT1G datasheet

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LESHAN RADIO COMPANY, LTD. General Purpose Amplifier Transistor LMSD1819A-RT1G S-LMSD1819A-RT1G NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the 3 SC-70/SOT-323 package which is designed for low power surface mount applications. 1 Features 2 High hFE, 210-460 Low VCE... See More ⇒

Detailed specifications: LH8050PLT1G , LH8550PLT1G , LJ2015-52 , LMBT6429LT1G , LMBTA06UT1G , LMBTA06WT1G , LMBTA43LT1G , LMBTA56WT1G , 13005 , LS301 , LS302 , LS303 , LS310 , LS311 , LS312 , LS313 , LS3250A .