All Transistors. LMSD1819A-RT1G Datasheet

 

LMSD1819A-RT1G Datasheet and Replacement


   Type Designator: LMSD1819A-RT1G
   SMD Transistor Code: ZR
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: SOT-323
 

 LMSD1819A-RT1G Substitution

   - BJT ⓘ Cross-Reference Search

   

LMSD1819A-RT1G Datasheet (PDF)

 ..1. Size:90K  lrc
 lmsd1819a-rt1g.pdf pdf_icon

LMSD1819A-RT1G

LESHAN RADIO COMPANY, LTD.General Purpose AmplifierTransistorLMSD1819A-RT1GS-LMSD1819A-RT1GNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in the3SC-70/SOT-323 package which is designed for low power surfacemount applications.1Features2 High hFE, 210-460 Low VCE

Datasheet: LH8050PLT1G , LH8550PLT1G , LJ2015-52 , LMBT6429LT1G , LMBTA06UT1G , LMBTA06WT1G , LMBTA43LT1G , LMBTA56WT1G , S9013 , LS301 , LS302 , LS303 , LS310 , LS311 , LS312 , LS313 , LS3250A .

History: 3CG22 | ZTX109B | 2N4013 | 2N1000 | GS9020H | 2SD1350A | 2SA1069A

Keywords - LMSD1819A-RT1G transistor datasheet

 LMSD1819A-RT1G cross reference
 LMSD1819A-RT1G equivalent finder
 LMSD1819A-RT1G lookup
 LMSD1819A-RT1G substitution
 LMSD1819A-RT1G replacement

 

 
Back to Top

 


 
.