All Transistors. LMSD1819A-RT1G Datasheet

 

LMSD1819A-RT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: LMSD1819A-RT1G
   SMD Transistor Code: ZR
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: SOT-323

 LMSD1819A-RT1G Transistor Equivalent Substitute - Cross-Reference Search

   

LMSD1819A-RT1G Datasheet (PDF)

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 lmsd1819a-rt1g.pdf

LMSD1819A-RT1G LMSD1819A-RT1G

LESHAN RADIO COMPANY, LTD.General Purpose AmplifierTransistorLMSD1819A-RT1GS-LMSD1819A-RT1GNPN Silicon Surface MountThis NPN Silicon Epitaxial Planar Transistor is designed for generalpurpose amplifier applications. This device is housed in the3SC-70/SOT-323 package which is designed for low power surfacemount applications.1Features2 High hFE, 210-460 Low VCE

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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