All Transistors. MIMD10A Datasheet

 

MIMD10A Datasheet and Replacement


   Type Designator: MIMD10A
   SMD Transistor Code: C73
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-363
 

 MIMD10A Substitution

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MIMD10A Datasheet (PDF)

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MIMD10A

MIMD10AMIMD10A DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT Features Epitaxial Planar Die Construction ASOT-363 Built-In Biasing Resistors Dim Min Max C2 B1 E1 One 500mA PNP and One 100mA NPN A 0.10 0.30 Lead Free/RoHS Compliant (Note 1) B C B 1.15 1.35 "Green" Device (Note 3 and 4) C 2.00 2.20 E2 B2 C1D 0.65 Nominal Mechanical Data

Datasheet: LS3550B , LS3550C , LS358 , LSBTH10T1G , LSSBTH10T1G , M28S-B , M28S-C , M28S-D , 2SC1740 , MJ11012G , MJ11015G , MJ11016G , MJ11021G , MJ11022G , MJ11028G , MJ11032G , MJ11033G .

History: BC178 | 3DD207 | 2SD590 | SM3180 | MJ10009 | CSC815

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