MMBT3906LT1G Datasheet. Specs and Replacement

Type Designator: MMBT3906LT1G  📄📄 

SMD Transistor Code: 2A

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-23

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MMBT3906LT1G datasheet

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MMBT3906LT1G

MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features AEC-Q101 Qualified and PPAP Capable http //onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER ... See More ⇒

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MMBT3906LT1G

MMBT3906LT1G General Purpose Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -40 Vdc 2 Collector-Base Voltage VCBO -40 Vdc EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -200 mAdc ... See More ⇒

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MMBT3906LT1G

MMBT3906LT1 PNP General Purpose Transistor 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A SOT-23 Epitaxial planar die construction. Dim Min Max A 2.70 3.10 E Complementary NPN type available B 1.10 1.50 K B C 1.0 Typical (MMBT3904). D 0.4 Typical E 0.35 0.48 J Collector Current Capability ICM =-200mA. D G 1.80 2.00 G H 0.02 0.1 Low Voltage(Max -40V). J 0.1 Typi... See More ⇒

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MMBT3906LT1G

FM120-M WILLAS THRU MMBT3906LT1 General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H PNP Silicon Low profile surface mounted application in order to... See More ⇒

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Detailed specifications: MMBT3904WG, MMBT3904WGH, MMBT3904WT1G, MMBT3904ZW, MMBT3906FA, MMBT3906FZ, MMBT3906-G, MMBT3906-HF, S9013, MMBT3906LTG, MMBT3906SL, MMBT3906TT1G, MMBT3906WG, MMBT3906WGH, MMBT3906WT1G, MMBT4124LT1G, MMBT4126LT1G

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