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MMBT3906LTG PDF Specs and Replacement


   Type Designator: MMBT3906LTG
   SMD Transistor Code: 2A
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23
 

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MMBT3906LTG PDF detailed specifications

 ..1. Size:1218K  first silicon
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MMBT3906LTG

MMBT3906LTG General Purpose Transistors Package outline Features We declare that the material of product compliance with RoHS requirements. 3 Ordering Information 1 Device Marking Shipping 2 MMBT3906LTG 2A 3000/Tape & Reel SOT 23 Maximum Ratings 3 Rating Symbol Value Unit COLLECTOR Collector-Emitter Voltage VCEO -40 Vdc 1 Collector-Base Voltage VCBO -40 Vdc BASE Emitt... See More ⇒

 4.1. Size:120K  onsemi
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MMBT3906LTG

MMBT3906LT1G General Purpose Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -40 Vdc 2 Collector-Base Voltage VCBO -40 Vdc EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -200 mAdc ... See More ⇒

 4.2. Size:128K  onsemi
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MMBT3906LTG

MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features AEC-Q101 Qualified and PPAP Capable http //onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER ... See More ⇒

 4.3. Size:1670K  lge
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MMBT3906LTG

MMBT3906LT1 PNP General Purpose Transistor 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A SOT-23 Epitaxial planar die construction. Dim Min Max A 2.70 3.10 E Complementary NPN type available B 1.10 1.50 K B C 1.0 Typical (MMBT3904). D 0.4 Typical E 0.35 0.48 J Collector Current Capability ICM =-200mA. D G 1.80 2.00 G H 0.02 0.1 Low Voltage(Max -40V). J 0.1 Typi... See More ⇒

Detailed specifications: MMBT3904WGH , MMBT3904WT1G , MMBT3904ZW , MMBT3906FA , MMBT3906FZ , MMBT3906-G , MMBT3906-HF , MMBT3906LT1G , 2SC2655 , MMBT3906SL , MMBT3906TT1G , MMBT3906WG , MMBT3906WGH , MMBT3906WT1G , MMBT4124LT1G , MMBT4126LT1G , MMBT4400 .

History: MMBT3906LT1G | KCX55

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