MMBT3906LTG Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT3906LTG
SMD Transistor Code: 2A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-23
MMBT3906LTG Transistor Equivalent Substitute - Cross-Reference Search
MMBT3906LTG Datasheet (PDF)
mmbt3906ltg.pdf
MMBT3906LTGGeneral Purpose TransistorsPackage outlineFeatures We declare that the material of product compliance with RoHSrequirements.3Ordering Information1Device Marking Shipping2MMBT3906LTG 2A 3000/Tape & ReelSOT23Maximum Ratings3Rating Symbol Value UnitCOLLECTORCollector-Emitter Voltage VCEO -40 Vdc1Collector-Base Voltage VCBO -40 VdcBASEEmitt
mmbt3906lt1-d.pdf
MMBT3906LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -40 Vdc2Collector-Base Voltage VCBO -40 VdcEMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -200 mAdc
mmbt3906lt1g.pdf
MMBT3906L, SMMBT3906LGeneral Purpose TransistorPNP SiliconFeatures AEC-Q101 Qualified and PPAP Capablehttp://onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTER
mmbt3906lt1.pdf
MMBT3906LT1 PNP General Purpose Transistor1. BASE 2. EMITTER3. COLLECTORFEATURES A SOT-23 Epitaxial planar die construction. Dim Min MaxA 2.70 3.10E Complementary NPN type available B 1.10 1.50K BC 1.0 Typical(MMBT3904). D 0.4 TypicalE 0.35 0.48J Collector Current Capability ICM =-200mA. DG 1.80 2.00GH 0.02 0.1 Low Voltage(Max:-40V).J 0.1 Typi
mmbt3906lt1.pdf
FM120-M WILLASTHRUMMBT3906LT1General Purpose BARRIER RECTIFIERS -20V- 200VTransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HPNP Silicon Low profile surface mounted application in order to
mmbt3906lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES As complementary type, the NPN transistor MMBT3904LT1 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collecto
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
