MMDT8050S Specs and Replacement
Type Designator: MMDT8050S
SMD Transistor Code: N24*
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-26 SOT-363
MMDT8050S Substitution
MMDT8050S datasheet
mmdt8050s.pdf
UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat)=40mV (typ.)@IC / IB = 50mA / 2.5mA ... See More ⇒
mmdt8150.pdf
UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference. FEATURES * Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA *... See More ⇒
Detailed specifications: MMBTA92-G , MMBTA92LT1G , MMBTH10-4LT1G , MMBTH10LT1G , MMBTH10M3 , MMBTH10W , MMDT3904V , MMDT3906V , 2SD313 , MMDT8150 , MMDTA06 , MMJD2955 , MMJD3055 , MMJT350T1G , MMS8050-H , MMS8050-L , MMS8550-H .
History: MMS8050-L
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