MMDT8050S Datasheet. Specs and Replacement

Type Designator: MMDT8050S  📄📄 

SMD Transistor Code: N24*

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 9 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-26 SOT-363

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MMDT8050S datasheet

 ..1. Size:116K  utc

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MMDT8050S

UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat)=40mV (typ.)@IC / IB = 50mA / 2.5mA ... See More ⇒

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 mmdt8150.pdf pdf_icon

MMDT8050S

UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference. FEATURES * Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA *... See More ⇒

Detailed specifications: MMBTA92-G, MMBTA92LT1G, MMBTH10-4LT1G, MMBTH10LT1G, MMBTH10M3, MMBTH10W, MMDT3904V, MMDT3906V, BD223, MMDT8150, MMDTA06, MMJD2955, MMJD3055, MMJT350T1G, MMS8050-H, MMS8050-L, MMS8550-H

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