All Transistors. MMDT8150 Datasheet

 

MMDT8150 Datasheet and Replacement


   Type Designator: MMDT8150
   SMD Transistor Code: T81*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT-26 SOT-363
 

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MMDT8150 Datasheet (PDF)

 ..1. Size:134K  utc
 mmdt8150.pdf pdf_icon

MMDT8150

UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference. FEATURES * Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA *

 9.1. Size:116K  utc
 mmdt8050s.pdf pdf_icon

MMDT8150

UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat)=40mV (typ.)@IC / IB = 50mA / 2.5mA

Datasheet: MMBTA92LT1G , MMBTH10-4LT1G , MMBTH10LT1G , MMBTH10M3 , MMBTH10W , MMDT3904V , MMDT3906V , MMDT8050S , TIP42 , MMDTA06 , MMJD2955 , MMJD3055 , MMJT350T1G , MMS8050-H , MMS8050-L , MMS8550-H , MMS8550-L .

History: AFY18VII | PEMD3

Keywords - MMDT8150 transistor datasheet

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