MMJD3055 Datasheet. Specs and Replacement
Type Designator: MMJD3055 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO-252
MMJD3055 Substitution
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MMJD3055 datasheet
MCC Micro Commercial Components TM MMJD3055 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Silicon Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN epitaxial planer RoHS Compliant. See ordering information) Capable of 1.25Watts of Power Dissipation. Transistors Collector-cu... See More ⇒
Detailed specifications: MMBTH10M3, MMBTH10W, MMDT3904V, MMDT3906V, MMDT8050S, MMDT8150, MMDTA06, MMJD2955, 8550, MMJT350T1G, MMS8050-H, MMS8050-L, MMS8550-H, MMS8550-L, MMS9012-H, MMS9012-L, MMS9013-H
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