All Transistors. MMJD3055 Datasheet

 

MMJD3055 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMJD3055
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO-252

 MMJD3055 Transistor Equivalent Substitute - Cross-Reference Search

   

MMJD3055 Datasheet (PDF)

 ..1. Size:371K  mcc
 mmjd3055.pdf

MMJD3055 MMJD3055

MCCMicro Commercial ComponentsTM MMJD305520736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Silicon Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN epitaxial planer RoHS Compliant. See ordering information) Capable of 1.25Watts of Power Dissipation.Transistors Collector-cu

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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