All Transistors. MMJD3055 Datasheet

 

MMJD3055 Datasheet and Replacement


   Type Designator: MMJD3055
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO-252
 

 MMJD3055 Substitution

   - BJT ⓘ Cross-Reference Search

   

MMJD3055 Datasheet (PDF)

 ..1. Size:371K  mcc
 mmjd3055.pdf pdf_icon

MMJD3055

MCCMicro Commercial ComponentsTM MMJD305520736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Silicon Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates NPN epitaxial planer RoHS Compliant. See ordering information) Capable of 1.25Watts of Power Dissipation.Transistors Collector-cu

Datasheet: MMBTH10M3 , MMBTH10W , MMDT3904V , MMDT3906V , MMDT8050S , MMDT8150 , MMDTA06 , MMJD2955 , D209L , MMJT350T1G , MMS8050-H , MMS8050-L , MMS8550-H , MMS8550-L , MMS9012-H , MMS9012-L , MMS9013-H .

History: 3DD13005A | STC04IE170HP | BC140-16 | KT646V | BFW41 | 2N3637CSM | KT6137A

Keywords - MMJD3055 transistor datasheet

 MMJD3055 cross reference
 MMJD3055 equivalent finder
 MMJD3055 lookup
 MMJD3055 substitution
 MMJD3055 replacement

 

 
Back to Top

 


 
.