PBHV2160Z Specs and Replacement
Type Designator: PBHV2160Z
SMD Transistor Code: HV216Z
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.65 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 1.7 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: SOT-223
PBHV2160Z Substitution
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PBHV2160Z datasheet
PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBHV3160Z 2. Features and benefits Low collector-emitter saturation voltage VCEsat Hig... See More ⇒
Detailed specifications: MMSS8550W-J, MMSS8550W-L, MMST2222A-G, MMT8050, MMT8550, MX0912B100Y, P2N2222AG, DTC114WM, S9018, PBHV3160Z, PBHV8115X, PBHV8118T, PBHV8540X, PBHV8560Z, PBHV9040X, PBHV9050Z, PBHV9115X
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