PBHV2160Z Datasheet, Equivalent, Cross Reference Search
Type Designator: PBHV2160Z
SMD Transistor Code: HV216Z
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.65 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 1.7 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT-223
PBHV2160Z Transistor Equivalent Substitute - Cross-Reference Search
PBHV2160Z Datasheet (PDF)
..1. Size:197K nxp
pbhv2160z.pdf
pbhv2160z.pdf
PBHV2160Z600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor24 June 2015 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223(SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV3160Z2. Features and benefits Low collector-emitter saturation voltage VCEsat Hig
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
