All Transistors. PBHV2160Z Datasheet

 

PBHV2160Z Datasheet and Replacement


   Type Designator: PBHV2160Z
   SMD Transistor Code: HV216Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.65 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT-223
 

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PBHV2160Z Datasheet (PDF)

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PBHV2160Z

PBHV2160Z600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor24 June 2015 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223(SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV3160Z2. Features and benefits Low collector-emitter saturation voltage VCEsat Hig

Datasheet: MMSS8550W-J , MMSS8550W-L , MMST2222A-G , MMT8050 , MMT8550 , MX0912B100Y , P2N2222AG , DTC114WM , 2SD1555 , PBHV3160Z , PBHV8115X , PBHV8118T , PBHV8540X , PBHV8560Z , PBHV9040X , PBHV9050Z , PBHV9115X .

History: BDX56 | 2N4890 | BUS131A | MJ10015 | CV7644 | BF375C | 2N1726

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