All Transistors. PBHV3160Z Datasheet

 

PBHV3160Z Datasheet and Replacement


   Type Designator: PBHV3160Z
   SMD Transistor Code: HV216Z
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.65 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 38 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT-223
 

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PBHV3160Z Datasheet (PDF)

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PBHV3160Z

PBHV3160Z600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor18 August 2014 Product data sheet1. General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.2. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High colle

Datasheet: MMSS8550W-L , MMST2222A-G , MMT8050 , MMT8550 , MX0912B100Y , P2N2222AG , DTC114WM , PBHV2160Z , 2SC1740 , PBHV8115X , PBHV8118T , PBHV8540X , PBHV8560Z , PBHV9040X , PBHV9050Z , PBHV9115X , PBHV9414Z .

History: GES3638 | PBHV8115X | BC69PA | P2N2222AG | BCX27

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