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RT2C00M Specs and Replacement

Type Designator: RT2C00M

SMD Transistor Code: LE_LF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: SOT-353

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RT2C00M datasheet

 ..1. Size:144K  isahaya

 rt2c00m.pdf pdf_icon

RT2C00M

RT2C00M COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DESCRIPTION RT2C00M is a composite transistor built with two 2SC3052 chips in SC-88 package. FEATURE Silicon npn epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION For low frequency amplify applicatio... See More ⇒

Detailed specifications: PVR100AZ-B3V0 , PVR100AZ-B3V3 , PVR100AZ-B5V0 , RT1A3906 , RT1A3906-T122 , RT1C3904 , RT1C3904-T112 , RT2A00AM1 , TIP122 , RT3W77M , RT3WLMM , RT3XBBM , RT3Y97M , RT3YA7M , RT3YB7M , RTE13LFM , RXT2222A .

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