All Transistors. RT2C00M Datasheet

 

RT2C00M Datasheet, Equivalent, Cross Reference Search


   Type Designator: RT2C00M
   SMD Transistor Code: LE_LF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT-353

 RT2C00M Transistor Equivalent Substitute - Cross-Reference Search

   

RT2C00M Datasheet (PDF)

 ..1. Size:144K  isahaya
 rt2c00m.pdf

RT2C00M RT2C00M

RT2C00M COMPOSITE TRANSISTORFOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unit:mm DESCRIPTION RT2C00M is a composite transistor built with two 2SC3052 chips in SC-88 package. FEATURE Silicon npn epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION For low frequency amplify applicatio

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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