All Transistors. RT2C00M Datasheet

 

RT2C00M Datasheet and Replacement


   Type Designator: RT2C00M
   SMD Transistor Code: LE_LF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT-353
 

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RT2C00M Datasheet (PDF)

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RT2C00M

RT2C00M COMPOSITE TRANSISTORFOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unit:mm DESCRIPTION RT2C00M is a composite transistor built with two 2SC3052 chips in SC-88 package. FEATURE Silicon npn epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION For low frequency amplify applicatio

Datasheet: PVR100AZ-B3V0 , PVR100AZ-B3V3 , PVR100AZ-B5V0 , RT1A3906 , RT1A3906-T122 , RT1C3904 , RT1C3904-T112 , RT2A00AM1 , 2SA1943 , RT3W77M , RT3WLMM , RT3XBBM , RT3Y97M , RT3YA7M , RT3YB7M , RTE13LFM , RXT2222A .

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