RT3W77M Specs and Replacement
Type Designator: RT3W77M
SMD Transistor Code: W77
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-363
RT3W77M Substitution
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RT3W77M datasheet
PRELIMINARY PRELIMINARY RT3W77M Notice This is not a final specification Some parametric are subject to change. Composite Transistor For General Purpose High Current Drive Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm 2.1 RT3W77M is compound transistor built with 2SC6046 1.25 chip and 2SA2166 chip in SC-88 package. FEATURE ... See More ⇒
Detailed specifications: PVR100AZ-B3V3 , PVR100AZ-B5V0 , RT1A3906 , RT1A3906-T122 , RT1C3904 , RT1C3904-T112 , RT2A00AM1 , RT2C00M , A1015 , RT3WLMM , RT3XBBM , RT3Y97M , RT3YA7M , RT3YB7M , RTE13LFM , RXT2222A , RXT2907A .
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