All Transistors. RT3W77M Datasheet

 

RT3W77M Datasheet and Replacement


   Type Designator: RT3W77M
   SMD Transistor Code: W77
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-363
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RT3W77M Datasheet (PDF)

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RT3W77M

PRELIMINARY PRELIMINARY RT3W77M NoticeThis is not a final specification Some parametric are subject to change. Composite Transistor For General Purpose High Current Drive ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm 2.1 RT3W77M is compound transistor built with 2SC6046 1.25 chip and 2SA2166 chip in SC-88 package. FEATURE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC3012-3PN | BUT62 | CTP3551 | 2N5811 | BT2944 | 2SC489 | 2N2130

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