All Transistors. RT3W77M Datasheet

 

RT3W77M Datasheet, Equivalent, Cross Reference Search

Type Designator: RT3W77M

SMD Transistor Code: W77

Material of Transistor: Si

Polarity: NPN*PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-363

RT3W77M Transistor Equivalent Substitute - Cross-Reference Search

 

RT3W77M Datasheet (PDF)

1.1. rt3w77m.pdf Size:123K _upd

RT3W77M
RT3W77M

PRELIMINARY PRELIMINARY RT3W77M Notice:This is not a final specification Some parametric are subject to change. Composite Transistor For General Purpose High Current Drive Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit:mm 2.1 RT3W77M is compound transistor built with 2SC6046 1.25 chip and 2SA2166 chip in SC-88 package. ① ⑥ FEATURE ② ⑤

Datasheet: PVR100AZ-B3V3 , PVR100AZ-B5V0 , RT1A3906 , RT1A3906-T122 , RT1C3904 , RT1C3904-T112 , RT2A00AM1 , RT2C00M , S8550 , RT3WLMM , RT3XBBM , RT3Y97M , RT3YA7M , RT3YB7M , RTE13LFM , RXT2222A , RXT2907A .

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