RT3W77M Datasheet, Equivalent, Cross Reference Search
Type Designator: RT3W77M
SMD Transistor Code: W77
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-363
RT3W77M Transistor Equivalent Substitute - Cross-Reference Search
RT3W77M Datasheet (PDF)
..1. Size:123K isahaya
rt3w77m.pdf
rt3w77m.pdf
PRELIMINARY PRELIMINARY RT3W77M NoticeThis is not a final specification Some parametric are subject to change. Composite Transistor For General Purpose High Current Drive ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm 2.1 RT3W77M is compound transistor built with 2SC6046 1.25 chip and 2SA2166 chip in SC-88 package. FEATURE
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
