RT3WLMM Specs and Replacement
Type Designator: RT3WLMM
SMD Transistor Code: WLM
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Package: SOT-363
RT3WLMM Substitution
- BJT ⓘ Cross-Reference Search
RT3WLMM datasheet
PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3WLMM is compound transistor built with 2SC3052 2.1 chip and ISA1235A chip in SC-88 package. 1.25 FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting ... See More ⇒
Detailed specifications: PVR100AZ-B5V0 , RT1A3906 , RT1A3906-T122 , RT1C3904 , RT1C3904-T112 , RT2A00AM1 , RT2C00M , RT3W77M , 13007 , RT3XBBM , RT3Y97M , RT3YA7M , RT3YB7M , RTE13LFM , RXT2222A , RXT2907A , S1015 .
History: RT2C00M
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