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UMF5N Specs and Replacement


   Type Designator: UMF5N
   SMD Transistor Code: F5
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Collector Capacitance (Cc): 6.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 270
   Noise Figure, dB: -
   Package: SOT-363

 UMF5N Transistor Equivalent Substitute - Cross-Reference Search

   

UMF5N detailed specifications

 ..1. Size:89K  rohm
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UMF5N

UMF5N Transistors Power management (dual transistors) UMF5N 2SA2018 and DTC144EE are housed independently in a UMT package. Application Dimensions (Units mm) Power management circuit UMT6 Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. Structure Silicon epitaxial planar transistor Each lead has same dimensio... See More ⇒

 ..2. Size:655K  htsemi
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UMF5N

UMF5N General purpose transistors (dual transistors) FEATURES SOT-363 2SA2018 and DTC144E are housed independently in a package. Mounting possible with SOT-363 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. 1 (3) (2) (1) Marking F5 DTr2 Tr1 R1 Equivalent circuit R2 (4) (5) (6) T... See More ⇒

Detailed specifications: S2000N , S2055N , S2SA1774G , S2SC4617G , S-L2SA2030M3T5G , S-L2SC3837T1G , UD2195 , UMF21N , S8550 , BCR108F , BCR112W , BCR116S , BCR119F , BCR119W , BCR129 , BCR129S , BCR129W .

Keywords - UMF5N transistor specs

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