2S32 Datasheet. Specs and Replacement
Type Designator: 2S32 📄📄
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 0.6 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO1
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2S32 Substitution
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2S32 datasheet
2S323A Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a 7.75 (0.305) 8.51 (0.335) Hermetically sealed TO5 Metal Package. 6.10 (0.240) 6.60 (0.260) 0.89 (0.035)max. 38.00 Bipolar NPN Device. (1.5) 0.41 (0.016) min. 0.53 (0.021) dia. VCEO = 25V 5.08 (0.200) IC = 0.05A typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can... See More ⇒
Detailed specifications: 2S3040, 2S304A, 2S305, 2S305A, 2S306, 2S307, 2S307A, 2S31, BC549, 2S321, 2S3210, 2S322, 2S3220, 2S3221, 2S322A, 2S323, 2S3230
Keywords - 2S32 pdf specs
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BJT Parameters and How They Relate
History: 2S325 | 2SA1464-P | 2S3230 | 2S322A
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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