2S3230 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2S3230
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 0.25 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO1
2S3230 Transistor Equivalent Substitute - Cross-Reference Search
2S3230 Datasheet (PDF)
2s323a.pdf
2S323ADimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar NPN Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar NPN Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 25V 5.08 (0.200)IC = 0.05A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 can
Datasheet: 2S32 , 2S321 , 2S3210 , 2S322 , 2S3220 , 2S3221 , 2S322A , 2S323 , 2SC2482 , 2S324 , 2S3240 , 2S325 , 2SB647-B , 2S326 , 2SB647A-C , 2S327 , 2SB647A-B .