DRA2L14Y Datasheet. Specs and Replacement

Type Designator: DRA2L14Y

SMD Transistor Code: K4

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: MINI3-G3-B

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DRA2L14Y datasheet

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DRA2L14Y

This product complies with the RoHS Directive (EU 2002/95/EC). DRA2L14Y Silicon PNP epitaxial planar type For digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1 Base Embossed type (Thermo-compression sealing) 3000 pcs / reel (sta... See More ⇒

Detailed specifications: DRA2144W, DRA2152Z, DRA2514E, DRA2522J, DRA2523E, DRA2523Y, DRA2533Q, DRA2543E, 2SC5198, DRA3113Z, DRA3114E, DRA3114T, DRA3114Y, DRA3115E, DRA3115G, DRA3115T, DRA3123E

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