DRA2L14Y Datasheet and Replacement
Type Designator: DRA2L14Y
SMD Transistor Code: K4
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 30
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: MINI3-G3-B
DRA2L14Y Datasheet (PDF)
dra2l14y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRA2L14YSilicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sealing): 3000 pcs / reel (sta
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