All Transistors. DRA2L14Y Datasheet

 

DRA2L14Y Datasheet and Replacement


   Type Designator: DRA2L14Y
   SMD Transistor Code: K4
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: MINI3-G3-B
 

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DRA2L14Y Datasheet (PDF)

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DRA2L14Y

This product complies with the RoHS Directive (EU 2002/95/EC).DRA2L14YSilicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sealing): 3000 pcs / reel (sta

Datasheet: DRA2144W , DRA2152Z , DRA2514E , DRA2522J , DRA2523E , DRA2523Y , DRA2533Q , DRA2543E , 2SC2383Y , DRA3113Z , DRA3114E , DRA3114T , DRA3114Y , DRA3115E , DRA3115G , DRA3115T , DRA3123E .

History: J461 | 2SC254 | BFN23R | 2SC94 | BF257CSM4 | 2SC936 | BLX77

Keywords - DRA2L14Y transistor datasheet

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