DRA5L14Y Datasheet. Specs and Replacement

Type Designator: DRA5L14Y

SMD Transistor Code: K4

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SMINI3-F2-B

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DRA5L14Y datasheet

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DRA5L14Y

This product complies with the RoHS Directive (EU 2002/95/EC). DRA5L14Y Silicon PNP epitaxial planar type For digital circuits DRA2L14Y in SMini3 type package Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package SMini3-F2-B Pin Name Packaging 1 Base Embossed type (Thermo-compres... See More ⇒

Detailed specifications: DRA5A23Y, DRA5A24E, DRA5A43E, DRA5A43T, DRA5A43X, DRA5A43Z, DRA5A44E, DRA5A44W, D880, DRA9113Z, DRA9114E, DRA9114T, DRA9114Y, DRA9115E, DRA9115G, DRA9115T, DRA9123E

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