All Transistors. DRA5L14Y Datasheet

 

DRA5L14Y Datasheet, Equivalent, Cross Reference Search


   Type Designator: DRA5L14Y
   SMD Transistor Code: K4
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SMINI3-F2-B

 DRA5L14Y Transistor Equivalent Substitute - Cross-Reference Search

   

DRA5L14Y Datasheet (PDF)

 ..1. Size:414K  panasonic
 dra5l14y.pdf

DRA5L14Y DRA5L14Y

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5L14YSilicon PNP epitaxial planar typeFor digital circuitsDRA2L14Y in SMini3 type package Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package SMini3-F2-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compres

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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