All Transistors. DRA5L14Y Datasheet

 

DRA5L14Y Datasheet and Replacement


   Type Designator: DRA5L14Y
   SMD Transistor Code: K4
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SMINI3-F2-B
 

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DRA5L14Y Datasheet (PDF)

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DRA5L14Y

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5L14YSilicon PNP epitaxial planar typeFor digital circuitsDRA2L14Y in SMini3 type package Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package SMini3-F2-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compres

Datasheet: DRA5A23Y , DRA5A24E , DRA5A43E , DRA5A43T , DRA5A43X , DRA5A43Z , DRA5A44E , DRA5A44W , 2SD669A , DRA9113Z , DRA9114E , DRA9114T , DRA9114Y , DRA9115E , DRA9115G , DRA9115T , DRA9123E .

History: KRC834E | CIL928AO | FXT655 | 3DD13009A8 | CZT32C | RT1N24BS

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