DTA114EEFRA Specs and Replacement

Type Designator: DTA114EEFRA

SMD Transistor Code: 14

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT-416

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DTA114EEFRA datasheet

 ..1. Size:3896K  rohm

dta114eefra dta114ekafra dta114emfha dta114euafra.pdf pdf_icon

DTA114EEFRA

DTA114E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC -50V IC(MAX.) -100mA R1 10k DTA114EM DTA114EEB R2 (SC-105AA) (SC-89) 10k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration ... See More ⇒

 5.1. Size:54K  motorola

pdta114eef 2.pdf pdf_icon

DTA114EEFRA

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each) 1... See More ⇒

 5.2. Size:54K  philips

pdta114eef 2.pdf pdf_icon

DTA114EEFRA

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each) 1... See More ⇒

 6.1. Size:57K  motorola

pdta114ee 2.pdf pdf_icon

DTA114EEFRA

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114EE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EE FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit... See More ⇒

Detailed specifications: DTA113EM3T5G, DTA113TKA, DTA113ZEFRA, DTA113ZKAFRA, DTA113ZUAFRA, DTA113ZVA, DTA114EA3, DTA114EB3, A1015, DTA114EET1G, DTA114EKAFRA, DTA114EM3, DTA114EM3T5G, DTA114EMFHA, DTA114EN3, DTA114ES3, DTA114EUAFRA

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