All Transistors. DTDG14GP Datasheet

 

DTDG14GP Datasheet and Replacement


   Type Designator: DTDG14GP
   SMD Transistor Code: E01
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R2 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SC-62
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DTDG14GP Datasheet (PDF)

 ..1. Size:46K  rohm
 dtdg14gp.pdf pdf_icon

DTDG14GP

DTDG14GP Transistors 1A / 60V Digital Transistor (with built-in resistor and zener diode) DTDG14GP External dimensions (Unit : mm) Applications Driver 4.51.51.6 Features 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) (1) (2) (3)2) Low saturation voltage, 0.4(VCE(sat)=0.4V at IC / IB=500mA / 5mA) 0.50.4 0.43) Built-in zener diode gives strong protection agains

 9.1. Size:306K  lrc
 ldtdg12gpt1g.pdf pdf_icon

DTDG14GP

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTDG12GPT1Gwith Monolithic Bias Resistor Network Applications Driver 3 Features 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 12) Low saturation voltage, 2(VCE(sat)=0.4V at IC / IB=500mA / 5mA) SC-893) Built-in zener diode gives strong protection against reverse surge by L- lo

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History: 2N3501S | MM4019 | BTB1424AT3 | 2N2473 | 2N3183 | 2SB1144S | BF420A

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