DTDG14GP Datasheet. Specs and Replacement

Type Designator: DTDG14GP

SMD Transistor Code: E01

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R2 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: SC-62

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DTDG14GP datasheet

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DTDG14GP

DTDG14GP Transistors 1A / 60V Digital Transistor (with built-in resistor and zener diode) DTDG14GP External dimensions (Unit mm) Applications Driver 4.5 1.5 1.6 Features 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) (1) (2) (3) 2) Low saturation voltage, 0.4 (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 0.5 0.4 0.4 3) Built-in zener diode gives strong protection agains... See More ⇒

 9.1. Size:306K  lrc

 ldtdg12gpt1g.pdf pdf_icon

DTDG14GP

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTDG12GPT1G with Monolithic Bias Resistor Network Applications Driver 3 Features 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 1 2) Low saturation voltage, 2 (VCE(sat)=0.4V at IC / IB=500mA / 5mA) SC-89 3) Built-in zener diode gives strong protection against reverse surge by L- lo... See More ⇒

Detailed specifications: DTD113ZUA, DTD114EA3, DTD114EN3, DTD114GK, DTD123TK, DTD143EN3, DTD143TK, DTD143TN3, 2222A, EMA3, EMA4, EMA5, EMB10, EMB10FHA, EMB11, EMB11FHA, EMB2

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