EMD30 Datasheet. Specs and Replacement

Type Designator: EMD30

SMD Transistor Code: D30

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SC-107C

 EMD30 Substitution

- BJT ⓘ Cross-Reference Search

 

EMD30 datasheet

 ..1. Size:271K  rohm

 emd30.pdf pdf_icon

EMD30

EMD30 Datasheet PNP + NPN Complex Digital Transistors (Bias Resistor Built-in Transistors) Outline EMT6 Parameter Value (6) (5) (4) VCC 30V (1) (2) IC(MAX.) 200mA (3) R1 1k EMD30 (SC-107C) R2 10k Parameter Value VCC 50V IC(MAX.) 100mA R1 10k R2 10k Features Inner circuit 1) Both the DTB713Z chip and DTC1... See More ⇒

 0.1. Size:76K  philips

 pemd30 pumd30.pdf pdf_icon

EMD30

PEMD30; PUMD30 NPN/PNP double resistor-equipped transistors; R1 = 2.2 k , R2 = open Rev. 01 31 March 2006 Product data sheet 1. Product profile 1.1 General description NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package PNP/PNP NPN/NPN complement complement Philips JEITA PEMD30 SOT66... See More ⇒

Detailed specifications: EMD12, EMD12FHA, EMD2, EMD22, EMD22FHA, EMD29, EMD2FHA, EMD3, BD136, EMD38, EMD3FHA, EMD4, EMD4DXV6T1G, EMD4DXV6T5G, EMD5, EMD52, EMD53

Keywords - EMD30 pdf specs

 EMD30 cross reference

 EMD30 equivalent finder

 EMD30 pdf lookup

 EMD30 substitution

 EMD30 replacement