All Transistors. EMD30 Datasheet

 

EMD30 Datasheet and Replacement


   Type Designator: EMD30
   SMD Transistor Code: D30
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SC-107C
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EMD30 Datasheet (PDF)

 ..1. Size:271K  rohm
 emd30.pdf pdf_icon

EMD30

EMD30DatasheetPNP + NPN Complex Digital Transistors (Bias Resistor Built-in Transistors) OutlineEMT6Parameter Value(6)(5)(4)VCC30V(1)(2)IC(MAX.)200mA(3)R11kEMD30(SC-107C)R210kParameter ValueVCC50VIC(MAX.)100mAR110kR210kFeatures Inner circuit1) Both the DTB713Z chip and DTC1

 0.1. Size:76K  philips
 pemd30 pumd30.pdf pdf_icon

EMD30

PEMD30; PUMD30NPN/PNP double resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 01 31 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)plastic packages.Table 1. Product overviewType number Package PNP/PNP NPN/NPNcomplement complementPhilips JEITAPEMD30 SOT66

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB355A | CD9018J | GT250-10D | 2N6190 | MMS8550 | 2N2991 | UN9110S

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