EMF5XV6T5G Datasheet. Specs and Replacement
Type Designator: EMF5XV6T5G
SMD Transistor Code: UY
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.357 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT-563
EMF5XV6T5G Substitution
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EMF5XV6T5G datasheet
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EMF5XV6T5 Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com Features Simplifies Circuit Design (3) (2) (1) Reduces Board Space Reduces Component Count Q1 These are Pb-Free Devices Q2 MAXIMUM RATINGS R2 R1 Rating Symbol Value Unit (4) (5) (6) Q1 (TA = 25 C unless o... See More ⇒
Detailed specifications: EMD6FHA, EMD72, EMD9, EMD9FHA, EMF18XV6, EMF18XV6T5, EMF18XV6T5G, EMF5XV6, BC337, EMG1, EMG2, EMG2DXV5T5G, EMG3, EMG4, EMG5, EMG5DXV5T1, EMG6
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