All Transistors. EMG5DXV5T1 Datasheet

 

EMG5DXV5T1 Datasheet and Replacement


   Type Designator: EMG5DXV5T1
   SMD Transistor Code: UF
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.23 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-553
 

 EMG5DXV5T1 Substitution

   - BJT ⓘ Cross-Reference Search

   

EMG5DXV5T1 Datasheet (PDF)

 ..1. Size:69K  onsemi
 emg2dxv5t1 emg5dxv5 emg2dxv5t5g emg5dxv5t1.pdf pdf_icon

EMG5DXV5T1

EMG2DXV5T1,EMG5DXV5T1Preferred DevicesDual Bias ResistorTransistorsNPN Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorNPN SILICONTransistor) contains a single transistor with a monolithic bias net

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: EMB4FHA | 2N827 | EMH1FHA | ECG68 | EN2222

Keywords - EMG5DXV5T1 transistor datasheet

 EMG5DXV5T1 cross reference
 EMG5DXV5T1 equivalent finder
 EMG5DXV5T1 lookup
 EMG5DXV5T1 substitution
 EMG5DXV5T1 replacement

 

 
Back to Top

 


 
.