All Transistors. EMH4FHA Datasheet

 

EMH4FHA Datasheet, Equivalent, Cross Reference Search


   Type Designator: EMH4FHA
   SMD Transistor Code: H4
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC-107C

 EMH4FHA Transistor Equivalent Substitute - Cross-Reference Search

   

EMH4FHA Datasheet (PDF)

 ..1. Size:1263K  rohm
emh4fha umh4nfha imh4afra.pdf

EMH4FHA
EMH4FHA

EMH4 / UMH4N / IMH4AEMH4FHA / UMH4NFHA / IMH4AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH4 UMH4N EMH4FHA UMH4NFHA(SC-107C) SOT-353 (SC-88) SMT6(4)

 ..2. Size:1223K  rohm
emh4fha umh4nfha.pdf

EMH4FHA
EMH4FHA

EMH4 / UMH4N / IMH4AEMH4FHA / UMH4NFHA / IMH4AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO50V (4) (4) (1) (1) (2) (2) IC(MAX.)100mA (3) (3) R110kWEMH4 UMH4N EMH4FHA UMH4NFHA(SC-107C) SOT-353 (SC-88) SMT6(4)

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
Back to Top