EMH52 Datasheet. Specs and Replacement

Type Designator: EMH52

SMD Transistor Code: H52

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SC-107C

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EMH52 datasheet

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EMH52

EMH52 Datasheet Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter DTr1 and DTr2 EMT6 VCC 50V IC(MAX.) 100mA R1 47k EMH52 R2 (SC-107C) 47k lFeatures lInner circuit l l 1) Two DTC044E chips in a EMT6 package. 2) Transister elements are independent, eliminating ... See More ⇒

Detailed specifications: EMH2, EMH25, EMH2FHA, EMH3, EMH3FHA, EMH4, EMH4FHA, EMH51, BD335, EMH53, EMH59, EMH6, EMH60, EMH61, EMH6FHA, EMH75, EMH9

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