All Transistors. EMH52 Datasheet

 

EMH52 Datasheet and Replacement


   Type Designator: EMH52
   SMD Transistor Code: H52
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-107C
 

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EMH52 Datasheet (PDF)

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EMH52

EMH52DatasheetComplex Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter DTr1 and DTr2 EMT6VCC50VIC(MAX.)100mA R147kEMH52R2 (SC-107C) 47k lFeatures lInner circuitl l1) Two DTC044E chips in a EMT6 package.2) Transister elements are independent, eliminating

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N368 | 2SA1557 | EMX1FHA | 2N5886 | 2N4976 | ECG69

Keywords - EMH52 transistor datasheet

 EMH52 cross reference
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