All Transistors. HBA114ES6R Datasheet

 

HBA114ES6R Datasheet and Replacement


   Type Designator: HBA114ES6R
   SMD Transistor Code: 8A
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT-363R
 

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HBA114ES6R Datasheet (PDF)

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HBA114ES6R

Spec. No. : C252S6R Issued Date : 2003.05.27 CYStech Electronics Corp.Revised Date : 2011.02.21 Page No. : 1/6 Dual PNP Digital Transistors HBA114ES6R Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isol

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HBA114ES6R

Spec. No. : C254S6R Issued Date : 2003.05.23 CYStech Electronics Corp.Revised Date : 2011.02.21 Page No. : 1/6 Dual PNP Digital Transistors HBA114TS6R Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isol

Datasheet: GN4F4Z , GN4L3M , GN4L3N , GN4L3Z , GN4L4K , GN4L4L , GN4L4M , GN4L4Z , 2SA1837 , HBA114TS6R , HBA143ES6R , HBA143TS6R , HBA143ZS6R , HBA144ES6R , HBC114ES6R , HBC114TS6R , HBC114YC6 .

History: 2SD553Y | MT6L76FS | MRF857S | KRA734E | 2SC175 | MQ5136 | 2SB827Q

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