HD1F2Q Specs and Replacement
Type Designator: HD1F2Q
SMD Transistor Code: LU
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 0.22 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT89
HD1F2Q Substitution
- BJT ⓘ Cross-Reference Search
HD1F2Q datasheet
hd1a3m hd1a4a hd1a4m hd1f2q hd1f3p hd1l2q hd1l3n.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: HBCA124ES6R, HBCA143TC6, HBCA143TS6R, HBCA144EC6, HBCA144ES6R, HD1A3M, HD1A4A, HD1A4M, 2222A, HD1F3P, HD1L2Q, HD1L3N, HD2A3M, HD2A4A, HD2A4M, HD2F2Q, HD2F3P
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