All Transistors. HD1F2Q Datasheet

 

HD1F2Q Datasheet and Replacement


   Type Designator: HD1F2Q
   SMD Transistor Code: LU
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 0.22 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89
 

 HD1F2Q Substitution

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HD1F2Q Datasheet (PDF)

 ..1. Size:514K  renesas
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HD1F2Q

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: HBCA124ES6R , HBCA143TC6 , HBCA143TS6R , HBCA144EC6 , HBCA144ES6R , HD1A3M , HD1A4A , HD1A4M , SS8050 , HD1F3P , HD1L2Q , HD1L3N , HD2A3M , HD2A4A , HD2A4M , HD2F2Q , HD2F3P .

History: 2SC5717 | NB213X

Keywords - HD1F2Q transistor datasheet

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