LDTBG12GPT1G PDF and Equivalents Search

 

LDTBG12GPT1G Specs and Replacement


   Type Designator: LDTBG12GPT1G
   SMD Transistor Code: Q8
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 0.045

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT-23
 

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LDTBG12GPT1G datasheet

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LDTBG12GPT1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor LDTBG12GPT1G with Monolithic Bias Resistor Network Applications Driver 3 Features 1) High hFE. 1 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, 2 (VCE(sat)=0.4V at IC / IB=500mA / 5mA) SOT-23 3) Built-in zener diode gives strong protection against reverse surge by L- l... See More ⇒

Detailed specifications: LDTB114EET1G , LDTB114GKT1G , LDTB114TKT1G , LDTB123EET1G , LDTB123TET1G , LDTB123YET1G , LDTB143EET1G , LDTB143TKT1G , TIP122 , LDTC113ZET1G , LDTC114EET1G , LDTC114EM3T5G , LDTC114GET1G , LDTC114TET1G , LDTC114TM3T5G , LDTC114WET1G , LDTC114YET1G .

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