All Transistors. LDTBG12GPT1G Datasheet

 

LDTBG12GPT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: LDTBG12GPT1G
   SMD Transistor Code: Q8
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 0.045
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT-23

 LDTBG12GPT1G Transistor Equivalent Substitute - Cross-Reference Search

   

LDTBG12GPT1G Datasheet (PDF)

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 ldtbg12gpt1g.pdf

LDTBG12GPT1G LDTBG12GPT1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTBG12GPT1Gwith Monolithic Bias Resistor Network Applications Driver 3 Features 1) High hFE. 1300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, 2(VCE(sat)=0.4V at IC / IB=500mA / 5mA) SOT-233) Built-in zener diode gives strong protection against reverse surge by L- l

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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