All Transistors. LDTBG12GPT1G Datasheet

 

LDTBG12GPT1G Datasheet and Replacement


   Type Designator: LDTBG12GPT1G
   SMD Transistor Code: Q8
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 0.045
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT-23
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LDTBG12GPT1G Datasheet (PDF)

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LDTBG12GPT1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTBG12GPT1Gwith Monolithic Bias Resistor Network Applications Driver 3 Features 1) High hFE. 1300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, 2(VCE(sat)=0.4V at IC / IB=500mA / 5mA) SOT-233) Built-in zener diode gives strong protection against reverse surge by L- l

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KSA1241O | KRC408 | LDTA115EET1G | KSA643Y | PHPT60406NY | KRC419 | CS9011I

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