LDTBG12GPT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LDTBG12GPT1G
SMD Transistor Code: Q8
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 0.045
Maximum Collector Power Dissipation (Pc): 0.5
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 80
MHz
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT-23
LDTBG12GPT1G Transistor Equivalent Substitute - Cross-Reference Search
LDTBG12GPT1G Datasheet (PDF)
ldtbg12gpt1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTBG12GPT1Gwith Monolithic Bias Resistor Network Applications Driver 3 Features 1) High hFE. 1300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, 2(VCE(sat)=0.4V at IC / IB=500mA / 5mA) SOT-233) Built-in zener diode gives strong protection against reverse surge by L- l
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: TRR100-12 | TRR50-12 | NSS60200LT1G | BC178 | 2SA2127-AE
History: TRR100-12 | TRR50-12 | NSS60200LT1G | BC178 | 2SA2127-AE
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BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D