All Transistors. LDTDG12GPT1G Datasheet

 

LDTDG12GPT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: LDTDG12GPT1G
   SMD Transistor Code: Q7
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 0.045
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SC-89

 LDTDG12GPT1G Transistor Equivalent Substitute - Cross-Reference Search

   

LDTDG12GPT1G Datasheet (PDF)

 ..1. Size:306K  lrc
 ldtdg12gpt1g.pdf

LDTDG12GPT1G LDTDG12GPT1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTDG12GPT1Gwith Monolithic Bias Resistor Network Applications Driver 3 Features 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 12) Low saturation voltage, 2(VCE(sat)=0.4V at IC / IB=500mA / 5mA) SC-893) Built-in zener diode gives strong protection against reverse surge by L- lo

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
Back to Top