All Transistors. LDTDG12GPT1G Datasheet

 

LDTDG12GPT1G Datasheet and Replacement


   Type Designator: LDTDG12GPT1G
   SMD Transistor Code: Q7
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 0.045
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SC-89
 

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LDTDG12GPT1G Datasheet (PDF)

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LDTDG12GPT1G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTDG12GPT1Gwith Monolithic Bias Resistor Network Applications Driver 3 Features 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 12) Low saturation voltage, 2(VCE(sat)=0.4V at IC / IB=500mA / 5mA) SC-893) Built-in zener diode gives strong protection against reverse surge by L- lo

Datasheet: LDTD113ZET1G , LDTD114EET1G , LDTD114GKT1G , LDTD123EET1G , LDTD123TET1G , LDTD123YET1G , LDTD143EET1G , LDTD143TKT1G , BC556 , LMUN2111LT1G , LMUN2112LT1G , LMUN2113LT1G , LMUN2114LT1G , LMUN2115LT1G , LMUN2116LT1G , LMUN2130LT1G , LMUN2131LT1G .

History: 2SD1329 | BDC06 | BDX88A | SDM5001 | 2SC1092 | ET1551 | NS3906

Keywords - LDTDG12GPT1G transistor datasheet

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