LDTDG12GPT1G Specs and Replacement

Type Designator: LDTDG12GPT1G

SMD Transistor Code: Q7

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 0.045

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: SC-89

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LDTDG12GPT1G datasheet

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LDTDG12GPT1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor LDTDG12GPT1G with Monolithic Bias Resistor Network Applications Driver 3 Features 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 1 2) Low saturation voltage, 2 (VCE(sat)=0.4V at IC / IB=500mA / 5mA) SC-89 3) Built-in zener diode gives strong protection against reverse surge by L- lo... See More ⇒

Detailed specifications: LDTD113ZET1G, LDTD114EET1G, LDTD114GKT1G, LDTD123EET1G, LDTD123TET1G, LDTD123YET1G, LDTD143EET1G, LDTD143TKT1G, D209L, LMUN2111LT1G, LMUN2112LT1G, LMUN2113LT1G, LMUN2114LT1G, LMUN2115LT1G, LMUN2116LT1G, LMUN2130LT1G, LMUN2131LT1G

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