All Transistors. LRX102UT1G Datasheet

 

LRX102UT1G Datasheet, Equivalent, Cross Reference Search

Type Designator: LRX102UT1G

SMD Transistor Code: BM

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT-353

LRX102UT1G Transistor Equivalent Substitute - Cross-Reference Search

 

LRX102UT1G Datasheet (PDF)

1.1. lrx102ut1g.pdf Size:485K _lrc

LRX102UT1G
LRX102UT1G

LESHAN RADIO COMPANY, LTD. EPITAXIAL PLANAR NPN/PNP TRANSISTOR LRX102UT1G S-LRX102UT1G Features Including two devices in USV. (UltraSuperminitypewith5leads.) With Built-in bias resistors. Simplify circuit design. SC-88A/SOT-353 Reduce a quantity of parts and manufacturing process. We declare that the material of product compliance with RoHS requirements. EQUIVALENT CIRC

Datasheet: LMUN5233T1G , LMUN5234DW1T1G , LMUN5234T1G , LMUN5235DW1T1G , LMUN5235T1G , LMUN5236DW1T1G , LMUN5237DW1T1G , LMUN5237T1G , SS8050 , LUMA5NT1G , LUMC3NT1G , LUMF23NDW1T1G , LUMG10NT1G , LUMG2NT1G , LUMG3NT1G , EMA8 , KSR1201 .

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