LRX102UT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LRX102UT1G
SMD Transistor Code: BM
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in bias resistor R1 = 47 kOhm
Built in bias resistor R2 = 47 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-353
LRX102UT1G Transistor Equivalent Substitute - Cross-Reference Search
LRX102UT1G Datasheet (PDF)
1.1. lrx102ut1g.pdf 
Size:485K _lrc
LESHAN RADIO COMPANY, LTD. EPITAXIAL PLANAR NPN/PNP TRANSISTOR LRX102UT1G S-LRX102UT1G Features Including two devices in USV. (UltraSuperminitypewith5leads.) With Built-in bias resistors. Simplify circuit design. SC-88A/SOT-353 Reduce a quantity of parts and manufacturing process. We declare that the material of product compliance with RoHS requirements. EQUIVALENT CIRC
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