LRX102UT1G PDF and Equivalents Search

 

LRX102UT1G Specs and Replacement


   Type Designator: LRX102UT1G
   SMD Transistor Code: BM
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-353
 

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LRX102UT1G datasheet

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LRX102UT1G

LESHAN RADIO COMPANY, LTD. EPITAXIAL PLANAR NPN/PNP TRANSISTOR LRX102UT1G S-LRX102UT1G Features Including two devices in USV. (UltraSuperminitypewith5leads.) With Built-in bias resistors. Simplify circuit design. SC-88A/SOT-353 Reduce a quantity of parts and manufacturing process. We declare that the material of product compliance with RoHS requirements. EQUIVALENT CIRC... See More ⇒

Detailed specifications: LMUN5233T1G , LMUN5234DW1T1G , LMUN5234T1G , LMUN5235DW1T1G , LMUN5235T1G , LMUN5236DW1T1G , LMUN5237DW1T1G , LMUN5237T1G , 8550 , LUMA5NT1G , LUMC3NT1G , LUMF23NDW1T1G , LUMG10NT1G , LUMG2NT1G , LUMG3NT1G , EMA8 , KSR1201 .

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