LRX102UT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LRX102UT1G
SMD Transistor Code: BM
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-353
LRX102UT1G Transistor Equivalent Substitute - Cross-Reference Search
LRX102UT1G Datasheet (PDF)
lrx102ut1g.pdf
LESHAN RADIO COMPANY, LTD.EPITAXIAL PLANARNPN/PNP TRANSISTORLRX102UT1GS-LRX102UT1GFeatures Including two devices in USV.(UltraSuperminitypewith5leads.) With Built-in bias resistors. Simplify circuit design.SC-88A/SOT-353 Reduce a quantity of parts and manufacturing process. We declare that the material of product compliance with RoHS requirements.EQUIVALENT CIRC
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2N2905
