LUMG10NT1G Specs and Replacement

Type Designator: LUMG10NT1G

SMD Transistor Code: N2

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 33

Noise Figure, dB: -

Package: SC-88A

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LUMG10NT1G datasheet

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LUMG10NT1G

LESHAN RADIO COMPANY, LTD. Dual NPN Digital Transistor Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site LUMG10NT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LUMG10NT1G Ordering Information Device Marking Shipping LUMG10NT1G 3000/Tape&Reel N2 S-LUMG10NT1G LUMG10NT3G 10000/Tape&Reel N2 S-LUMG10NT3G... See More ⇒

Detailed specifications: LMUN5235T1G, LMUN5236DW1T1G, LMUN5237DW1T1G, LMUN5237T1G, LRX102UT1G, LUMA5NT1G, LUMC3NT1G, LUMF23NDW1T1G, 2SC945, LUMG2NT1G, LUMG3NT1G, EMA8, KSR1201, KSR1202, KSR1203, KSR1204, KSR1205

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