LUMG10NT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: LUMG10NT1G
SMD Transistor Code: N2
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 33
Noise Figure, dB: -
Package: SC-88A
LUMG10NT1G Transistor Equivalent Substitute - Cross-Reference Search
LUMG10NT1G Datasheet (PDF)
lumg10nt1g.pdf
LESHAN RADIO COMPANY, LTD.Dual NPN Digital Transistor Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique SiteLUMG10NT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LUMG10NT1GOrdering InformationDevice Marking ShippingLUMG10NT1G3000/Tape&ReelN2S-LUMG10NT1GLUMG10NT3G10000/Tape&ReelN2S-LUMG10NT3G
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SC2780
