MUN5132T1G Datasheet and Replacement
Type Designator: MUN5132T1G
SMD Transistor Code: 6J
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.202 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: SOT-323
MUN5132T1G Substitution
MUN5132T1G Datasheet (PDF)
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MUN5111T1G Series,SMUN5111T1G,NSVMUN5111T1G SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorhttp://onsemi.comwith Monolithic Bias Resistor NetworkPNP SILICONThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorBIAS RESISTORTransistor (BRT) contains a single transistor with a
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MUN2132, MMUN2132L,MUN5132, DTA143EE,DTA143EM3, NSBA143EF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 4.7 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B
mun5132dw1.pdf

MUN5132DW1,NSBA143EDXV6,NSBA143EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 4.7 kW, R2 = 4.7 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor w
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: KSB794R | NA01HY | KSC1507O
Keywords - MUN5132T1G transistor datasheet
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History: KSB794R | NA01HY | KSC1507O



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