MUN5132T1G datasheet, аналоги, основные параметры
Наименование производителя: MUN5132T1G 📄📄
Маркировка: 6J
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 4.7 kOhm
Соотношение сопротивлений R1/R2 = 1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.202 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 15
Корпус транзистора: SOT-323
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Аналоги (замена) для MUN5132T1G
- подборⓘ биполярного транзистора по параметрам
MUN5132T1G даташит
mun5111t1g mun5112t1g mun5113t1g mun5114t1g mun5115t1g mun5116t1g mun5130t1g mun5131t1g mun5132t1g mun5133t1g mun5134t1g mun5135t1g mun5136t1g mun5137t1g.pdf
MUN5111T1G Series, SMUN5111T1G, NSVMUN5111T1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network PNP SILICON This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor BIAS RESISTOR Transistor (BRT) contains a single transistor with a
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mun2132 mmun2132l mun5132 dta143ee dta143em3 nsba143ef3.pdf
MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 4.7 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B
mun5132dw1.pdf
MUN5132DW1, NSBA143EDXV6, NSBA143EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 4.7 kW, R2 = 4.7 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor w
Другие транзисторы: MUN5130DW1, MUN5130DW1T1G, MUN5130T1G, MUN5131DW1, MUN5131DW1T1G, MUN5131T1G, MUN5132DW1, MUN5132DW1T1G, 2SA1837, MUN5133DW1T1G, MUN5133T1G, MUN5134DW1, MUN5134DW1T1G, MUN5134T1G, MUN5135DW1T1G, MUN5135T1G, MUN5136DW1
Параметры биполярного транзистора и их взаимосвязь
History: KT8304A-5 | BUT22C | KT685G | FHC122E | STL73 | MUN5131DW1 | BDX47
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