MUN5132T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MUN5132T1G  📄📄 

Código: 6J

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 4.7 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.202 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 15

Encapsulados: SOT-323

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MUN5132T1G datasheet

 ..1. Size:171K  onsemi
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MUN5132T1G

MUN5111T1G Series, SMUN5111T1G, NSVMUN5111T1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network PNP SILICON This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor BIAS RESISTOR Transistor (BRT) contains a single transistor with a

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MUN5132T1G

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MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 4.7 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B

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MUN5132DW1, NSBA143EDXV6, NSBA143EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 4.7 kW, R2 = 4.7 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor w

MOSTRAR MÁS

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