All Transistors. RT3PDDM Datasheet

 

RT3PDDM Datasheet and Replacement


   Type Designator: RT3PDDM
   SMD Transistor Code: PDD
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-88
 

 RT3PDDM Substitution

   - BJT ⓘ Cross-Reference Search

   

RT3PDDM Datasheet (PDF)

 ..1. Size:168K  isahaya
rt3pddm.pdf pdf_icon

RT3PDDM

RT3PDDM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3PDDM is composite transistor built with two 1.25 RT1P237 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver

Datasheet: RT3NVVM , RT3NWWM , RT3NXXM , RT3P11M , RT3P33M , RT3P55M , RT3P66M , RT3P77M , TIP3055 , RT3PEEM , RT3PFFM , RT3PRRM , RT3T11M , RT3T14M , RT3T22M , RT3T33M , RT3T66M .

History: RTAN430M | 2SA812M8

Keywords - RT3PDDM transistor datasheet

 RT3PDDM cross reference
 RT3PDDM equivalent finder
 RT3PDDM lookup
 RT3PDDM substitution
 RT3PDDM replacement

 

 
Back to Top

 


 
.