RT3PDDM Specs and Replacement
Type Designator: RT3PDDM
SMD Transistor Code: PDD
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SC-88
RT3PDDM Substitution
- BJT ⓘ Cross-Reference Search
RT3PDDM datasheet
RT3PDDM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT3PDDM is composite transistor built with two 1.25 RT1P237 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver... See More ⇒
Detailed specifications: RT3NVVM, RT3NWWM, RT3NXXM, RT3P11M, RT3P33M, RT3P55M, RT3P66M, RT3P77M, A1015, RT3PEEM, RT3PFFM, RT3PRRM, RT3T11M, RT3T14M, RT3T22M, RT3T33M, RT3T66M
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