RT3T22M Specs and Replacement
Type Designator: RT3T22M
SMD Transistor Code: T22
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SC-88
RT3T22M Substitution
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RT3T22M datasheet
PRELIMINARY RT3T22M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3T22M is compound transistor built with RT1N241 and RT1P241 in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit,... See More ⇒
Detailed specifications: RT3P66M, RT3P77M, RT3PDDM, RT3PEEM, RT3PFFM, RT3PRRM, RT3T11M, RT3T14M, TIP42C, RT3T33M, RT3T66M, RT3T77M, RT3TAAM, RT3TBBM, RT3TCCM, RT3TDDM, RT3TFFM
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