All Transistors. RT3TDDM Datasheet

 

RT3TDDM Datasheet and Replacement


   Type Designator: RT3TDDM
   SMD Transistor Code: TDD
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC-88
 

 RT3TDDM Substitution

   - BJT ⓘ Cross-Reference Search

   

RT3TDDM Datasheet (PDF)

 ..1. Size:177K  isahaya
 rt3tddm.pdf pdf_icon

RT3TDDM

PRELIMINARY RT3TDDM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3TBBM is compound transistor built with RT1N237 chip and RT1P237 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin

Datasheet: RT3T14M , RT3T22M , RT3T33M , RT3T66M , RT3T77M , RT3TAAM , RT3TBBM , RT3TCCM , S8050 , RT3TFFM , RT3TGGM , RT3THHM , RT3TLLM , RT3TSSM , RT3TTTM , RT3X99M , RT3XAAM .

History: 2SB1393A | BSS60 | 2SD1039

Keywords - RT3TDDM transistor datasheet

 RT3TDDM cross reference
 RT3TDDM equivalent finder
 RT3TDDM lookup
 RT3TDDM substitution
 RT3TDDM replacement

 

 
Back to Top

 


 
.