RT3TDDM Specs and Replacement

Type Designator: RT3TDDM

SMD Transistor Code: TDD

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SC-88

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RT3TDDM datasheet

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RT3TDDM

PRELIMINARY RT3TDDM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3TBBM is compound transistor built with RT1N237 chip and RT1P237 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin... See More ⇒

Detailed specifications: RT3T14M, RT3T22M, RT3T33M, RT3T66M, RT3T77M, RT3TAAM, RT3TBBM, RT3TCCM, 13003, RT3TFFM, RT3TGGM, RT3THHM, RT3TLLM, RT3TSSM, RT3TTTM, RT3X99M, RT3XAAM

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