RT3TFFM Specs and Replacement

Type Designator: RT3TFFM

SMD Transistor Code: TFF

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: SC-88

 RT3TFFM Substitution

- BJT ⓘ Cross-Reference Search

 

RT3TFFM datasheet

 ..1. Size:166K  isahaya

 rt3tffm.pdf pdf_icon

RT3TFFM

PRELIMINARY RT3TFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3TFFM is compound transistor built with RT1N431 chip and RT1P431 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin... See More ⇒

Detailed specifications: RT3T22M, RT3T33M, RT3T66M, RT3T77M, RT3TAAM, RT3TBBM, RT3TCCM, RT3TDDM, 2SD1047, RT3TGGM, RT3THHM, RT3TLLM, RT3TSSM, RT3TTTM, RT3X99M, RT3XAAM, RT5N136C

Keywords - RT3TFFM pdf specs

 RT3TFFM cross reference

 RT3TFFM equivalent finder

 RT3TFFM pdf lookup

 RT3TFFM substitution

 RT3TFFM replacement