RT3TGGM Specs and Replacement
Type Designator: RT3TGGM
SMD Transistor Code: TGG
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SC-88
RT3TGGM Substitution
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RT3TGGM datasheet
PRELIMINARY RT3TGGM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm 2.1 RT3TGGM is composite transistor built with RT1N432 1.25 chip and RT1P432 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mountin... See More ⇒
Detailed specifications: RT3T33M, RT3T66M, RT3T77M, RT3TAAM, RT3TBBM, RT3TCCM, RT3TDDM, RT3TFFM, 2SC2073, RT3THHM, RT3TLLM, RT3TSSM, RT3TTTM, RT3X99M, RT3XAAM, RT5N136C, RT5N140C
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