All Transistors. RT3TGGM Datasheet

 

RT3TGGM Datasheet, Equivalent, Cross Reference Search

Type Designator: RT3TGGM

SMD Transistor Code: TGG

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in bias resistor R1 = 4.7 kOhm

Built in bias resistor R2 = 10 kOhm

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SC-88

RT3TGGM Transistor Equivalent Substitute - Cross-Reference Search

 

RT3TGGM Datasheet (PDF)

1.1. rt3tggm.pdf Size:157K _upd

RT3TGGM
RT3TGGM

PRELIMINARY RT3TGGM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit:mm 2.1 RT3TGGM is composite transistor built with RT1N432 1.25 chip and RT1P432 chip in SC-88 package. ① ⑥ FEATURE ② ⑤ Silicon epitaxial type Each transistor elements are independent. ③ ④ Mini package for easy mountin

Datasheet: RT3T33M , RT3T66M , RT3T77M , RT3TAAM , RT3TBBM , RT3TCCM , RT3TDDM , RT3TFFM , C102 , RT3THHM , RT3TLLM , RT3TSSM , RT3TTTM , RT3X99M , RT3XAAM , RT5N136C , RT5N140C .

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