All Transistors. RT3TGGM Datasheet

 

RT3TGGM Datasheet and Replacement


   Type Designator: RT3TGGM
   SMD Transistor Code: TGG
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SC-88
 

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RT3TGGM Datasheet (PDF)

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RT3TGGM

PRELIMINARY RT3TGGM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm 2.1 RT3TGGM is composite transistor built with RT1N432 1.25 chip and RT1P432 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mountin

Datasheet: RT3T33M , RT3T66M , RT3T77M , RT3TAAM , RT3TBBM , RT3TCCM , RT3TDDM , RT3TFFM , S9014 , RT3THHM , RT3TLLM , RT3TSSM , RT3TTTM , RT3X99M , RT3XAAM , RT5N136C , RT5N140C .

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