RT3TGGM Datasheet, Equivalent, Cross Reference Search
Type Designator: RT3TGGM
SMD Transistor Code: TGG
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 150
MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SC-88
RT3TGGM Transistor Equivalent Substitute - Cross-Reference Search
RT3TGGM Datasheet (PDF)
rt3tggm.pdf
PRELIMINARY RT3TGGM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm 2.1 RT3TGGM is composite transistor built with RT1N432 1.25 chip and RT1P432 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mountin
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
