RT3THHM Specs and Replacement
Type Designator: RT3THHM
SMD Transistor Code: THH
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SC-88
RT3THHM Substitution
- BJT ⓘ Cross-Reference Search
RT3THHM datasheet
RT3THHM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3THHM is compound transistor built with RT1N436 chip and RT1P436 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, ... See More ⇒
Detailed specifications: RT3T66M, RT3T77M, RT3TAAM, RT3TBBM, RT3TCCM, RT3TDDM, RT3TFFM, RT3TGGM, S9014, RT3TLLM, RT3TSSM, RT3TTTM, RT3X99M, RT3XAAM, RT5N136C, RT5N140C, RT5N141C
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