RT3TSSM Datasheet, Equivalent, Cross Reference Search
Type Designator: RT3TSSM
SMD Transistor Code: TSS
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 100 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-88
RT3TSSM Transistor Equivalent Substitute - Cross-Reference Search
RT3TSSM Datasheet (PDF)
..1. Size:166K isahaya
rt3tssm.pdf
rt3tssm.pdf
PRELIMINARY RT3TSSM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3TSSM is compound transistor built with RT1N150 chip and RT1P150 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
