RT3TSSM Specs and Replacement
Type Designator: RT3TSSM
SMD Transistor Code: TSS
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 100 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SC-88
RT3TSSM Substitution
- BJT ⓘ Cross-Reference Search
RT3TSSM datasheet
PRELIMINARY RT3TSSM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3TSSM is compound transistor built with RT1N150 chip and RT1P150 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin... See More ⇒
Detailed specifications: RT3TAAM, RT3TBBM, RT3TCCM, RT3TDDM, RT3TFFM, RT3TGGM, RT3THHM, RT3TLLM, A733, RT3TTTM, RT3X99M, RT3XAAM, RT5N136C, RT5N140C, RT5N141C, RT5N141S, RT5N14BC
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