All Transistors. RT3TSSM Datasheet

 

RT3TSSM Datasheet and Replacement


   Type Designator: RT3TSSM
   SMD Transistor Code: TSS
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 100 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC-88
 

 RT3TSSM Substitution

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RT3TSSM Datasheet (PDF)

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RT3TSSM

PRELIMINARY RT3TSSM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3TSSM is compound transistor built with RT1N150 chip and RT1P150 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin

Datasheet: RT3TAAM , RT3TBBM , RT3TCCM , RT3TDDM , RT3TFFM , RT3TGGM , RT3THHM , RT3TLLM , TIP31C , RT3TTTM , RT3X99M , RT3XAAM , RT5N136C , RT5N140C , RT5N141C , RT5N141S , RT5N14BC .

History: 2SC4046E | 2SB1261L | ECG337 | 2N2375 | BC738-25 | ZHB6790 | 2SD1033

Keywords - RT3TSSM transistor datasheet

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