RT3TTTM Specs and Replacement
Type Designator: RT3TTTM
SMD Transistor Code: TTT
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 200 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SC-88
RT3TTTM Substitution
- BJT ⓘ Cross-Reference Search
RT3TTTM datasheet
RT3TTTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3TTTM is compound transistor built with RT1N250 chip and RT1P250 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, ... See More ⇒
Detailed specifications: RT3TBBM, RT3TCCM, RT3TDDM, RT3TFFM, RT3TGGM, RT3THHM, RT3TLLM, RT3TSSM, S8550, RT3X99M, RT3XAAM, RT5N136C, RT5N140C, RT5N141C, RT5N141S, RT5N14BC, RT5N227C
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