RT3TTTM Datasheet, Equivalent, Cross Reference Search
Type Designator: RT3TTTM
SMD Transistor Code: TTT
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 200 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-88
RT3TTTM Transistor Equivalent Substitute - Cross-Reference Search
RT3TTTM Datasheet (PDF)
1.1. rt3tttm.pdf 
Size:166K _upd
RT3TTTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3TTTM is compound transistor built with RT1N250 chip and RT1P250 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit,
Datasheet: D32W7 , D32W8 , D32W9 , D33D1 , D33D2 , D33D21 , D33D22 , D33D23 , S9014 , D33D25 , D33D26 , D33D27 , D33D28 , D33D29 , D33D3 , D33D30 , D33D4 .
