All Transistors. RT3TTTM Datasheet

 

RT3TTTM Datasheet and Replacement


   Type Designator: RT3TTTM
   SMD Transistor Code: TTT
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 200 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC-88
 

 RT3TTTM Substitution

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RT3TTTM Datasheet (PDF)

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RT3TTTM

RT3TTTM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3TTTM is compound transistor built with RT1N250 chip and RT1P250 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit,

Datasheet: RT3TBBM , RT3TCCM , RT3TDDM , RT3TFFM , RT3TGGM , RT3THHM , RT3TLLM , RT3TSSM , A940 , RT3X99M , RT3XAAM , RT5N136C , RT5N140C , RT5N141C , RT5N141S , RT5N14BC , RT5N227C .

History: MJE3439G | DTC123YCA

Keywords - RT3TTTM transistor datasheet

 RT3TTTM cross reference
 RT3TTTM equivalent finder
 RT3TTTM lookup
 RT3TTTM substitution
 RT3TTTM replacement

 

 
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