All Transistors. RT3TTTM Datasheet

 

RT3TTTM Datasheet, Equivalent, Cross Reference Search

Type Designator: RT3TTTM

SMD Transistor Code: TTT

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 200 kOhm

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SC-88

RT3TTTM Transistor Equivalent Substitute - Cross-Reference Search

 

 

RT3TTTM Datasheet (PDF)

1.1. rt3tttm.pdf Size:166K _upd

RT3TTTM
RT3TTTM

 RT3TTTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit:mm RT3TTTM is compound transistor built with RT1N250 chip and RT1P250 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit,

Datasheet: D32W7 , D32W8 , D32W9 , D33D1 , D33D2 , D33D21 , D33D22 , D33D23 , S9014 , D33D25 , D33D26 , D33D27 , D33D28 , D33D29 , D33D3 , D33D30 , D33D4 .

 
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