RT3X99M Datasheet, Equivalent, Cross Reference Search
Type Designator: RT3X99M
SMD Transistor Code: X99
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 40 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 820
Noise Figure, dB: -
Package: SC-88
RT3X99M Transistor Equivalent Substitute - Cross-Reference Search
RT3X99M Datasheet (PDF)
..1. Size:167K isahaya
rt3x99m.pdf
rt3x99m.pdf
RT3X99M Composite Transistor For Muting ApplicationSilicon NPN Epitaxial Type OUTLINE DRAWING Unitmm DESCRIPTION RT3X99M is a composite transistor with built-in bias resistor FEATURE Built-in bias resistor ( R1=2.2 K) Mini package for easy mounting APPLICATION muting circuitswitching circuit TERMINAL CONNEC
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
