RT3X99M Specs and Replacement
Type Designator: RT3X99M
SMD Transistor Code: X99
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 40 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 820
Package: SC-88
RT3X99M Substitution
- BJT ⓘ Cross-Reference Search
RT3X99M datasheet
RT3X99M Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION RT3X99M is a composite transistor with built-in bias resistor FEATURE Built-in bias resistor ( R1=2.2 K ) Mini package for easy mounting APPLICATION muting circuit switching circuit TERMINAL CONNEC... See More ⇒
Detailed specifications: RT3TCCM, RT3TDDM, RT3TFFM, RT3TGGM, RT3THHM, RT3TLLM, RT3TSSM, RT3TTTM, 2SC4793, RT3XAAM, RT5N136C, RT5N140C, RT5N141C, RT5N141S, RT5N14BC, RT5N227C, RT5N230C
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