All Transistors. RT5N430C Datasheet

 

RT5N430C Datasheet, Equivalent, Cross Reference Search

Type Designator: RT5N430C

SMD Transistor Code: NA

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SC-59

RT5N430C Transistor Equivalent Substitute - Cross-Reference Search

 

RT5N430C Datasheet (PDF)

1.1. rt5n430c.pdf Size:135K _upd

RT5N430C
RT5N430C

PRELIMINARY RT5N430C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit: mm DESCRIPTION RT5N430C is a one chip transistor with built-in bias 2.8 resistor, PNP type is RT5P430C. 0.65 1.5 0.65 FEATURE Built-in bias resistor (R =4.7kΩ) 1 ① High collector current (Ic=0.5A) ② Mini package for easy mounting ③ A

4.1. rt5n431c.pdf Size:130K _upd

RT5N430C
RT5N430C

 RT5N431C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit: mm 2.8 RT5N431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor, PNP type is RT5P431C. FEATURE ① Built-in bias resistor (R =4.7kΩ, R =4.7kΩ) 1 2 High collector current (Ic=0.5A) ② ③ Mini package for easy mounting

 

Datasheet: RT5N141S , RT5N14BC , RT5N227C , RT5N230C , RT5N231C , RT5N234C , RT5N234S , RT5N333C , TIP41C , RT5N431C , UN211L , RT5P136C , RT5P141C , RT5P14BC , RT5P230C , RT5P231C , RT5P234C .

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