RTBN226AP1 PDF and Equivalents Search

RTBN226AP1 Specs and Replacement

Type Designator: RTBN226AP1

SMD Transistor Code: NN

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 0.22 kOhm

Built in Bias Resistor R2 = 2.2 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SC-62

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RTBN226AP1 datasheet

Detailed specifications: RTAN230M, RTAN230U, RTAN430C, RTAN430M, RTAN430U, RTBN131AP1, RTBN141AP1, RTBN14BAP1, BC549, RTBN234AP1, RTBN426AP1, RTBN432AP1, RTGN131AP, RTGN141AP, RTGN14BAP, RTGN226AP, RTGN234AP

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