All Transistors. RTBN226AP1 Datasheet

 

RTBN226AP1 Datasheet and Replacement


   Type Designator: RTBN226AP1
   SMD Transistor Code: NN
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 0.22 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC-62
 

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RTBN226AP1 Datasheet (PDF)

 ..1. Size:111K  isahaya
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RTBN226AP1

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN226AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN226AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor

 9.1. Size:111K  isahaya
 rtbn234ap1.pdf pdf_icon

RTBN226AP1

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN234AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN234AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor

Datasheet: RTAN230M , RTAN230U , RTAN430C , RTAN430M , RTAN430U , RTBN131AP1 , RTBN141AP1 , RTBN14BAP1 , 2222A , RTBN234AP1 , RTBN426AP1 , RTBN432AP1 , RTGN131AP , RTGN141AP , RTGN14BAP , RTGN226AP , RTGN234AP .

Keywords - RTBN226AP1 transistor datasheet

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