RTBN426AP1 Specs and Replacement

Type Designator: RTBN426AP1

SMD Transistor Code: NM

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 0.47 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SC-62

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RTBN426AP1 datasheet

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Detailed specifications: RTAN430C, RTAN430M, RTAN430U, RTBN131AP1, RTBN141AP1, RTBN14BAP1, RTBN226AP1, RTBN234AP1, 2SA1015, RTBN432AP1, RTGN131AP, RTGN141AP, RTGN14BAP, RTGN226AP, RTGN234AP, RTGN426AP, RTGN432P

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