All Transistors. RTBN426AP1 Datasheet

 

RTBN426AP1 Datasheet and Replacement


   Type Designator: RTBN426AP1
   SMD Transistor Code: NM
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 0.47 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SC-62
 

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RTBN426AP1 Datasheet (PDF)

 ..1. Size:112K  isahaya
 rtbn426ap1.pdf pdf_icon

RTBN426AP1

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN426AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN426AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor

 9.1. Size:112K  isahaya
 rtbn432ap1.pdf pdf_icon

RTBN426AP1

SMALL-SIGNAL TRANSISTORPRELIMINARY RTBN432AP1 NoticeThis is not a final specification Some parametric are subject to change. TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm RTBN432AP1 is a one chip transistor with built-in bias transistor. 4.6 MAX1.51.6FEATURE Built-in bias resistor

Datasheet: RTAN430C , RTAN430M , RTAN430U , RTBN131AP1 , RTBN141AP1 , RTBN14BAP1 , RTBN226AP1 , RTBN234AP1 , 2SC2240 , RTBN432AP1 , RTGN131AP , RTGN141AP , RTGN14BAP , RTGN226AP , RTGN234AP , RTGN426AP , RTGN432P .

History: C102 | BC148 | 2SC2625 | ZTX223M | ESM283 | DRC9A43Z | 2N1066

Keywords - RTBN426AP1 transistor datasheet

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