RTGN234AP Specs and Replacement

Type Designator: RTGN234AP

SMD Transistor Code: NA

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.22

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT89

 RTGN234AP Substitution

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RTGN234AP datasheet

 ..1. Size:158K  isahaya

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RTGN234AP

SMALL-SIGNAL TRANSISTOR RTGN234AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DISCRIPTION RTGN234AP is a one chip transistor with 4.6 MAX 1.5 built-in bias transistor. 1.6 FEATURE Built-in bias resistor R1=2.2k ,R2=10k 4.2 MAX 2.5 High collector current IC=1A E C B 0.8 MIN Bui... See More ⇒

 9.1. Size:139K  isahaya

 rtgn226ap.pdf pdf_icon

RTGN234AP

SMALL-SIGNAL TRANSISTOR RTGN226AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DISCRIPTION RTGN226AP is a one chip transistor with 4.6 MAX 1.5 built-in bias transistor. 1.6 FEATURE Built-in bias resistor R1=0.22k ,R2=2.2k 4.2 MAX 2.5 High collector current IC=1A E C B 0.8 MIN Bui... See More ⇒

Detailed specifications: RTBN226AP1, RTBN234AP1, RTBN426AP1, RTBN432AP1, RTGN131AP, RTGN141AP, RTGN14BAP, RTGN226AP, TIP142, RTGN426AP, RTGN432P, UMB10NFHA, UMB11NFHA, UMB2NFHA, UMB3NFHA, UMB4NFHA, UMB6NFHA

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