All Transistors. RTGN234AP Datasheet

 

RTGN234AP Datasheet and Replacement


   Type Designator: RTGN234AP
   SMD Transistor Code: NA
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89
 

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RTGN234AP Datasheet (PDF)

 ..1. Size:158K  isahaya
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RTGN234AP

SMALL-SIGNAL TRANSISTOR RTGN234AP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION RTGN234AP is a one chip transistor with 4.6 MAX1.5built-in bias transistor. 1.6FEATURE Built-in bias resistor R1=2.2k,R2=10k 4.2 MAX 2.5 High collector current IC=1A E CB0.8 MIN Bui

 9.1. Size:139K  isahaya
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RTGN234AP

SMALL-SIGNAL TRANSISTOR RTGN226AP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION RTGN226AP is a one chip transistor with 4.6 MAX1.5built-in bias transistor. 1.6FEATURE Built-in bias resistor R1=0.22k,R2=2.2k 4.2 MAX 2.5 High collector current IC=1A E CB0.8 MIN Bui

Datasheet: RTBN226AP1 , RTBN234AP1 , RTBN426AP1 , RTBN432AP1 , RTGN131AP , RTGN141AP , RTGN14BAP , RTGN226AP , A1266 , RTGN426AP , RTGN432P , UMB10NFHA , UMB11NFHA , UMB2NFHA , UMB3NFHA , UMB4NFHA , UMB6NFHA .

History: CC337-25 | 2S155 | VT6T2 | ZT1700

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