RTGN432P Specs and Replacement

Type Designator: RTGN432P

SMD Transistor Code: NE

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT89

 RTGN432P Substitution

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RTGN432P datasheet

 ..1. Size:129K  isahaya

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RTGN432P

SMALL-SIGNAL TRANSISTOR RTGN432P TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DISCRIPTION RTGN432P is a one chip transistor with 4.6 MAX 1.5 built-in bias transistor. 1.6 FEATURE Built-in bias resistor R1=4.7k ,R2=10k 4.2 MAX 2.5 High collector current IC=1A E C B 0.8 MIN Built-i... See More ⇒

 9.1. Size:159K  isahaya

 rtgn426ap.pdf pdf_icon

RTGN432P

SMALL-SIGNAL TRANSISTOR RTGN426AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DISCRIPTION RTGN426AP is a one chip transistor with 4.6 MAX 1.5 built-in bias transistor. 1.6 FEATURE Built-in bias resistor R1=0.47k ,R2=4.7k 4.2 MAX 2.5 High collector current IC=1A E C B 0.8 MIN B... See More ⇒

Detailed specifications: RTBN426AP1, RTBN432AP1, RTGN131AP, RTGN141AP, RTGN14BAP, RTGN226AP, RTGN234AP, RTGN426AP, MPSA42, UMB10NFHA, UMB11NFHA, UMB2NFHA, UMB3NFHA, UMB4NFHA, UMB6NFHA, UMC2NT1G, UMC3NT1G

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