UMB4NFHA Specs and Replacement
Type Designator: UMB4NFHA
SMD Transistor Code: B4
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-353
UMB4NFHA Substitution
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UMB4NFHA datasheet
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Detailed specifications: RTGN226AP, RTGN234AP, RTGN426AP, RTGN432P, UMB10NFHA, UMB11NFHA, UMB2NFHA, UMB3NFHA, MJE350, UMB6NFHA, UMC2NT1G, UMC3NT1G, UMC5NT1G, UMD12N, UMD12NFHA, UMD22N, UMD22NFHA
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